P-Na CMOS Procees SPICE Nustatymai

[tarook79]

Labas,
Šiuo metu aš dirbti projektavimo linijos, kuri turi būti įgyvendinta naudojant P-Na CMOS procesą.
Ar kas nors turi SPICE parametrų tranzistorius tokio proceso technologija 0,5 mikrono ar žemiau?

 

[Jake]

čia jis, csmc05
. modelio NVP PVO
lygis = 49
*
* BENDRIEJI PARAMETRAI
*
lmin = 5.5e-7 lmax = 2.0e-5 wmin = 6.0e-7 wmax = 2.0e-5
TREF = 27,0
versija = 3,2
tox ='1 ,27 E-08 toxpn "
toxm = 1.27e-08
xj = 2.0000000e-07
Nch = 3.9211000e
16lln = 0.1718000
lwn = 1.0000000
wln = 0.9096138
wwn = 1.9640454
lint = 2.9392644e-10
ll = 4.8657780e-09lw = 0.00 LWL = 3.2949680e-16
wint = 1.5321000e-07
wl = 3.1177917e-14
ww = 3.5282190e-20
WWL = 0,00
mobmod = 1
binunit = 2
xl ='0 ,00 E
00 xlpn "
Be garantijų ='0 ,00 E
00 xwpn "
lmlt = 1
wmlt = 1
binflag = 0
dwg = 7.5196240e-09
dwb = 8.8500040e-10
* TRIUKŠMAS MODELIO PARAMETRAI
noimod = 2
NoiA = 8.03959410758594E
18NoiB = 22750
NoiC = 0,00000000000324
Ef = 1,204
Em = 1840676.27288843
* Diode PARAMETRAI
ACM = 2
LDIF = 0,00
hdif = 6.00e-07
rsh = 169
rd = 0
Rs = 0
RSC = 0
RDC = 0
*
* RIBINĖS ĮTAMPOS PARAMETRAI
*
vth0 = "-9.73E-01 vthpn"
k1 = 0.4109161
k2 = 1.9222172e-02 lk2 = 3.4000000e-08
K3 = 4.7544390
dvt0 = 1.9507611
dvt1 = 0.9552611
dvt2 = 0.2375000
dvt0w = 1.5924101
dvt1w = 1.6596450e
06dvt2w = 2.0000000e-02
nlx = 9.4674930e-09
w0 = 4.4366630e-09
k3b = -1,7572563
ngate = 1.0000000e
30VfB = -0,1524965
*
* MOBILUMO PARAMETRAI
*
VSAT = 1.1421400e
05 pvsat = 2.8353107e-09
ua = 4.2156900e-09 pua = 5.7302530e-23
Ub = 6.2567930e-19
uc = 6.5204860e-11
rdsw = 7.5183910e
02prwb = -0,1286000
prwg = 1.5611597e-02
WR = 0.9781416
u0 = 2.5887955e-02
a0 = 0.9554556
giuly = 1.3701160e-02
a1 = 0,00
a2 = 0.4000000
AGS = 0.1720220 atsilieka = 2.2507542e-07
b0 = 6.5099060e-07
b1 = 1.4520109e-06
*
* SUBTHRESHOLD EINAMOSIOS PARAMETRAI
*
voff = 9.9300000e-02
nfactor = 0.8502510
Cit = 2.4700000e-09
cdsc = 9.0727240e-06
cdscb = 1.5753420e-05
cdscd = 1.2948903e-03
eta0 = 0.3668273
etab = 4.1721060e-03
dsub = 0.7021100
*
* Rout PARAMETRAI
*
pclm = 2.7501225
pdiblc1 = 1.0000000e-05
pdiblc2 = 7.5469860e-03
pdiblcb = -0,1250000
drout = 3.0000000
pscbe1 = 5.0336000e
08pscbe2 = 4.5000000e-07
pvag = 1.0000000
delta = 1.0000000e-02
alpha0 = 0,00
alpha1 = 0,00
beta0 = 30.0000000
*
* TEMPERATŪROS POVEIKIS PARAMETRAI
*
kt1 = -0,5000000
kt2 = 5.7841390E-02

AT = 1.1792727E
02Ute = -1,4499991
Ua1 = 2.5594273E-09
Ub1 = 8.0262190E-18
Uc1 = 4.5520970E-11
Kt1l = 8.9438480E-09
Prt = 8.2061230E
02*
* Capacitance PARAMETRAI
*
cj =
9 ,27 E-04 cjpn "
MJ = 0,3928
pb = 0,7557
cjsw ='3 ,02 E-10 cjswpn "
mjsw = 0,1841
php = 0,5105
cjgate = "5 ,0301 E-10 cjgatepn"
TPB = 0.0022064
tpbsw = 9.7723e-04
tcj = 7.3374e-04
tcjsw = 7.2026e-04
js = 1.00e-04
jsw = 0,00
n = 1,0
xti = 3,0
cgdo ='3 ,49 E-10 cgdopn "
cgso ='3 ,49 E-10 cgsopn "
cgbo = 1.0e-13
capmod = 2
nqsmod = 0
Guoba = 5
xpart = 0
cgsl = 2.4300000e-17
cgdl = 2.4300000e-17
ckappa = 0.6000000
CF = 0,00
CLC = 5.0000000e-12
cle = 2.3309000
DLC = 2.43e-17
BSP = 2.43e-17
vfbcv = -0,0871
llc = 0
lwc = 0
wlc = 0
WWC = 0
lwlc = 0
wwlc = 0
moin = 15
noff = 1
voffcv = 0

 

[tarook79]

Labas,
Parametrus jums išsiųstas yra PVO tranzistorius.
Ar turite parametrų NMOS tranzistorius į P-Na procesą, taip pat?